Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Very low intrinsic capacitances