PC28F640P33BF60D Datasheet PDF - Numonyx -> Micron
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PC28F640P33BF60D
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MFG CO.
Numonyx -> Micron
Introduction
This document provides information about the Numonyx® P33-65nm Single Bit per Cell (SBC) Flash Memory and describes its features, operations, and specifications.
P33-65nm SBC device is offered in 64-Mbit and 128-Mbit densities. Benefits include high-speed interface NOR device, and support for code and data storage. Features include high-performance synchronous-burst read mode, a dramatical improvement in buffer program time through larger buffer size, fast asynchronous access times, low power, flexible security options, and two industry-standard package choices.
P33-65nm SBC device is manufactured using 65nm process technology.
Overview
This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage.
Upon initial power-up or return from reset, the device defaults to asynchronous pagemode read. Configuring the RCR enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. A WAIT signal provides an easy CPU-to-flash memory synchronization.
Product Features
â—¾ High performance:
— 60ns initial access time for Easy BGA
— 70ns initial access time for TSOP
— 25ns 8-word asynchronous-page read
mode
— 52MHz with zero wait states, 17ns
clock-to-data output synchronous-burst read mode
— 4-, 8-, 16-, and continuous-word options
for burst mode
— 3.0V buffered programming at 1.8MByte/s
(Typ) using 256-word buffer
— Buffered Enhanced Factory Programming at
3.2MByte/s (typ) using 256-word buffer
â—¾ Architecture:
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
— Blank Check to verify an erased block
â—¾ Voltage and Power:
— VCC (core) voltage: 2.3V – 3.6V
— VCCQ (I/O) voltage: 2.3V – 3.6V
— Standby current: 35μA(Typ) for 64-Mbit,
50μA(Typ) for 128-Mbit
— Continuous synchronous read current:
23mA (Typ) at 52 MHz
â—¾ Security:
— One-Time Programmable Registers:
— 64 OTP bits, programmed with unique
information by Numonyx
— 2112 OTP bits, available for customer
programming
— Absolute write protection: VPP = VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down capability
— Password Access feature
â—¾ Software:
— 20µs (Typ) program suspend
— 20µs (Typ) erase suspend
— Basic Command Set and Extended Function
Interface (EFI) Command Set compatible
— Common Flash Interface capable
â—¾ Density and Packaging:
— 56-Lead TSOP package (128-Mbit, 64-Mbit)
— 64-Ball Easy BGA package (128-Mbit, 64-
Mbit)
— 16-bit wide data bus
â—¾ Quality and Reliability:
— JESD47E Compliant
— Operating temperature: –40°C to +85°C
— Minimum 100,000 erase cycles per block
— 65nm process technology
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