PD25025F Datasheet PDF - TriQuint Semiconductor

Introduction
   The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor ( 2.3GHz - 2.5GHz Class AB wireless base station LDMOS) RF power transistor suitable for amplifier applications.
   This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of deliver - ing a minimum output power of 25 W, it is ideally suited for todays RF power amplifier applications.

FEATUREs
• Application Specific Performance, 2.5 GHz
   • Typical 2-Tone Performance
      Average Load Power – 12.5 W
      ηD – 30%
      Power Gain – 12.5 dB
      IMD3: -30dBc @ -100kHz/ +100KHz
   • Typical CW Performance
      Average Load Power – 25 W
      ηD – 40%
      Power Gain – 12.0 dB