PD54003-E(2010) Datasheet PDF - STMicroelectronics

Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first SToriginated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly. surface-mount recommendations are available in application note AN1294 (see www.st.com/rf).

FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 3 W with 12dB gain @ 500 MHz
■ New RF plastic package