PMC85XP Datasheet PDF - Nexperia B.V. All rights reserved

General description
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

FEATUREs and benefits
• Trench MOSFET technology
• NPN transistor built-in bias resistors
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction

APPLICATIONs
• Charging switch for portable devices
• High-side load switch
• USB port overvoltage protection
• Power management in battery-driven portables
• Hard disk and computing power management