QS5U26 Datasheet PDF - ROHM Semiconductor

Features
1) The QS5U26 combines Pch MOSFET with
    a Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.

Structure
   Silicon P-channel MOSFET
   Schottky Barrier DIODE

APPLICATIONs
   Switching