QS6U24 Datasheet PDF - ROHM Semiconductor

Features
1) The QS6U24 combines Pch MOS FET with a
   Schottky barrier diode in a TSMT6 package.
2) Low on-state resisternce with a fast switching.
3) Low voltage drive (4V).
4) Built-in schottky barrier diode has low forward voltage.

APPLICATIONs
   Load switch, DC/DC conversion

Structure
   Silicon P-channel MOS FET
   Schottky Barrier DIODE