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RF2163(V2) Datasheet PDF - RF Micro Devices

RF2163 image

Part Name
RF2163

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page
12 Pages

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MFG CO.
RFMD
RF Micro Devices RFMD

Product Description
The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. The device is provided in a 16-pin leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line.


FEATUREs
• Single 3.3V Power Supply
• +30dBm Saturated Output Power
• 19dB Small Signal Gain
• High Power Added Efficiency
• Patent Pending Power Sense Technology
• 1800MHz to 2500MHz Frequency Range

Typical Applications
• 2.5GHz ISM Band Applications
• PCS Communication Systems
• Wireless LAN Systems
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
• Broadband Spread-Spectrum Systems


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