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RF4L10700CB4 Datasheet PDF - STMicroelectronics

RF4L10700CB4 image

Part Name
RF4L10700CB4

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page
11 Pages

File Size
517.1 kB

MFG CO.
STMICROELECTRONICS
STMicroelectronics STMICROELECTRONICS

Description
The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation. It is qualified up to 40 V operation.


FEATUREs
• High efficiency and linear gain operations
• Integrated ESD protection
• Internally matched pair transistors in push-pull configuration
• Large positive and negative gate-source voltage range for improved class C operation
• Optimized for Doherty applications
• Excellent thermal stability, low HCI drift
• In compliance with the European directive 2002/95/EC


APPLICATIONs
• ISM
• RF energy


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