RFD10P03LSM Datasheet PDF - Harris Semiconductor

Description
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

FEATUREs
• 10A, 30V
• rDS(ON)= 0.200Ω
• Temperature CompensatingPSPICE Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature