RFM0902-10 Datasheet PDF - RFHIC

Description
   The power amplifier module is designed for base stations and cell extenders as cellular and GSM , IMT-2000, ISM, MMDS frequency systems. GaAs MESFET is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding. The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because GaAs MESFET is operated by low supply voltage whereas others are operated by high supply voltage. For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink. This simplicity results cost competitiveness and performance enhancement.

Product Features
• Small size by using simple matching circuit board
• High Efficiency
• Single Supply Voltage
• High Linearity, 10W Power
• Heat sink 99.9% copper, gold plate
• High Productivity
• Low Manufacturing Cost
• GaAs MESFET

APPLICATION
• GSM Repeater
• RF Sub-Systems
• Base Station