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RFM12N10 Datasheet PDF - GE Solid State

RFM12N08 image

Part Name
RFM12N10

Other PDF
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page
4 Pages

File Size
216.5 kB

MFG CO.
GESS
GE Solid State GESS

N-Channel Enhancement-Mode Power Field-Effect Transistors


FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device


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