RFM15N12 Datasheet PDF - New Jersey Semiconductor

N-Channel Enhancement-Mode Power Field-Effect Transistors

   The RFM15N12 and RPM15N1S and the RFP15N12 and RFP15N15 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gatedrive power. These types can be operated directly from integrated circuits.

FEATUREs:
■ SO/A Is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High Input Impedance
■ Ma/ority carrier device