RFM8P10 Datasheet PDF - Harris Semiconductor

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

FEATUREs
• -8A, -80V and -100V
• rDS(ON) = 0.400Ω
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”