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RFPA5200TR7 Datasheet PDF - RF Micro Devices

RFPA5200 image

Part Name
RFPA5200TR7

Other PDF
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page
8 Pages

File Size
804.1 kB

MFG CO.
RFMD
RF Micro Devices RFMD

Product Description
   RFPA5200 is a three-stage power amplifier (PA) designed for 802.11b/g/n applications. The integrated input and output 50Ω match eliminates the need for any external matching components and greatly reduces layout area, bill of materials (BOM) and manufacturability cost in the customer application. The RFPA5200 is manufactured on an advanced InGaP heterojunction bipolar transistor (HBT) process. This PA is capable of achieving linear power up to 27dBm with an EVM < 3% while maintaining excellent power added efficiency (PAE). The device is provided in a 4mm x 4mm x 1mm, 10-pin laminate package and it meets or exceeds the power requirements of IEEE802.11b/g/n WiFi RF systems.


FEATUREs
◾ POUT = 27dBm, 5V < 3% Dynamic EVM
◾ 33dB Typical Gain
◾ High PAE
◾ Integrated Input and Output 50Ω Match
◾ Integrated Power Detector
◾ Integrated Harmonic Filtering


APPLICATIONs
◾ WiFi 802.11 b/g/n Applications
◾ Consumer Premise Equipment (CPE)
◾ Picocell; Femtocell
◾ Data Cards and Terminals
◾ Wireless Access Points, Gateways, Routers and Set Top Box Applications


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