S10A30 Datasheet PDF - Mospec Semiconductor

Schottky Barrier Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

* Low Forward Voltage
* Low Switching noise
* High Current Capacity
* Guarantee Reverse Avalance
* Guard-Ring for Stress Protection
* Low Power Loss & High efficiency
* 125°C Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction
* Plastic Material used Carries Underwriters Laboratory
   Flammability Classification 94V-O