SFP740(V2) Datasheet PDF - SemiWell Semiconductor

General Description
   This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have a high rugged avalanche characteristics. These device are well suited for half bridge and full bridge resonant topology like to electronic lamp ballast.

FEATUREs
✦ RDS(ON) Max 0.55 ohm at VGS = 10V
✦ Gate Charge ( Typical 46nC)
✦ Improve dv/dt capability, Fast switching
✦ 100% avalanche Tested