SMAJ19C Datasheet PDF - Shanghai Semitech Semiconductor Co., Ltd

Features
• Peak power dissipation 400W @10 x 1000 us Pulse
• Low profile package.
• Excellent clamping capability.
• Glass passivated junction.
• Fast response time: typically less than 1ps from 0 Volts to BV min
• Typical IR less than 1uA when VBR min above 12V.
• IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact)
• ESD protection of data lines in accordance with IEC 61000-4-2
• EFT protection of data lines in accordance with IEC 61000-4-4
• Halogen free and RoHS compliant
• Lead-free finish