SMBG9.0C Datasheet PDF - Vaishali Semiconductor

FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 600 W peak pulse power capability with a
    10/1000 µs waveform, repetitive rate (duty cycle):
    0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
    of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
    and WEEE 2002/96/EC
   
TYPICAL APPLICATIONS
    Use in sensitive electronics protection against voltage
    transients induced by inductive load switching and
    lighting on ICs, MOSFET, signal lines of sensor units
    for consumer, computer, industrial, automotive and
    telecommunication.