Product Description
Stanford Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.5 dBm.

Product Features
• High Output IP3: 32.5 dBm @ 850 MHz
• Cascadable 50 Ohm Gain Block
• Patented GaAs HBT Technology
• Operates From Single Supply

APPLICATIONs
• Cellular, PCS, CDPD, Wireless Data, SONET