SST29EE512-200-4C-NN Datasheet PDF - Silicon Storage Technology

PRODUCT DESCRIPTION
The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE512 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE512 conform to JEDEC standard pinouts for byte-wide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for SST29EE512
    – 3.0-3.6V for SST29LE512
    – 2.7-3.6V for SST29VE512
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 512 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 2.5 sec (typical)
    – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 70 and 90 ns
    – 3.0-3.6V operation: 150 and 200 ns
    – 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via Software Operation
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32-lead PLCC
    – 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
    – 32-pin PDIP