ST13003DN Datasheet PDF - STMicroelectronics

Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

FEATUREs
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
■ Integrated free-wheeling diode

APPLICATION
■ Compact fluorescent lamps (CFLs)