STB11NM60N-1 Datasheet PDF - STMicroelectronics

Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

FEATUREs   
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
   
Application
■ Switching applications