Description
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET⢠VI technology. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.
FEATUREs
ā RDS(on) * Qg industry benchmark
ā Extremely low on-resistance RDS(on)
ā High avalanche ruggedness
APPLICATION
ā Switching applications
ā Automotive