Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET⢠DeepGATE⢠technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
FEATUREs
ā 100% avalanche tested
ā Logic level drive
APPLICATIONs
ā Switching applications
ā Automotive