STB25NM60N(2007) Datasheet PDF - STMicroelectronics

Description
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

General features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel

APPLICATIONs
■ Switching application