STD6N95K5 Datasheet PDF - STMicroelectronics

Description
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.

FEATUREs
■ DPAK 950 V worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener-protected

APPLICATIONs
■ Switching applications