STF25N60M2-EP Datasheet PDF - STMicroelectronics

Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected

APPLICATIONs
• Switching applications
• Tailored for Very high frequency converters (f > 150 kHz)