STF25N80K5 Datasheet PDF - STMicroelectronics

Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected

APPLICATIONs
• Switching applications