STGAP1S Datasheet PDF - STMicroelectronics
Part Name
STGAP1S
Other PDF
no available.
PDF
page
67 Pages
File Size
2.4 MB
MFG CO.
STMicroelectronics
Description
The STGAP1S gapDRIVE™ is a galvanically isolated single gate driver for N-channel MOSFETs and IGBTs with advanced protection, configuration and diagnostic features. The architecture of the STGAP1S isolates the channel from the control and the low voltage interface circuitry through true galvanic isolation.
Features
• Qualified for automotive applications according
to AEC-Q100
• High voltage rail up to 1500 V
• Driver current capability: 5 A sink/source
current at 25 °C
• dV/dt transient immunity ± 50 V/ns in full
temperature range
• Overall input/output propagation delay: 100 ns
• Separate sink and source for easy gate driving
configuration
• Negative gate drive ability
• Active Miller clamp
• Desaturation detection
• SENSE input
• VCE active clamping
• Output 2-level turn-off
• Diagnostic status output
• UVLO and OVLO functions
• Programmable input deglitch filter
• Asynchronous stop command
• Programmable deadtime, with violation error
• SPI interface for parameters programming
• Temperature warning and shutdown protection
• Self-diagnostic routines for protection features
• Full effective fault protection
Applications
• 600/1200 V inverters
• Inverters for EVHEV
• EV charging stations
• Industrial drives
• UPS equipment
• DC/DC converters
• Solar inverters
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