STI10N62K3 Datasheet PDF - STMicroelectronics

Description
   These SuperMESH3â„¢ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESHâ„¢ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

FEATUREs
â–  100% avalanche tested
â–  Extremely high dv/dt capability
â–  Gate charge minimized
â–  Very low intrinsic capacitances
â–  Improved diode reverse recovery
   characteristics
â–  Zener-protected

APPLICATIONs
â–  Switching applications