STI13NM60N(2020) Datasheet PDF - STMicroelectronics

Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance

APPLICATIONs
• Switching applications