STI18N60M2 Datasheet PDF - STMicroelectronics

Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected

APPLICATION
• Switching applications
• LLC converters, resonant converters