STI18N65M2 Datasheet PDF - STMicroelectronics

Description
These devices are N-channel Power MOSFETs developed using MDmeshâ„¢ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

FEATUREs
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected

APPLICATIONs
• Switching applications
• LLC converters, resonant converters