STI18NM60N Datasheet PDF - STMicroelectronics

Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

FEATUREs
â–  100% avalanche tested
â–  Low input capacitance and gate charge
â–  Low gate input resistance

APPLICATION
   Switching applications