STI19NM65N Datasheet PDF - STMicroelectronics

Description
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

APPLICATION
■ Switching applications