STL150N3LLH5(2013) Datasheet PDF - STMicroelectronics

Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.

FEATUREs

• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses

APPLICATIONs
• Switching applications