STL22N65M5(2013) Datasheet PDF - STMicroelectronics

Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

APPLICATIONs
■ Switching applications