DESCRIPTION
This application specific Power MOSFET is the second generation of STMicroelectronis unique "STripFET™" technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance.
■ TYPICAL RDS(on) = 0.055 Ω
■ IMPROVED DIE-TO-FOOTPRINT RATIO
■ VERY LOW PROFILE PACKAGE (1mm MAX)
■ VERY LOW THERMAL RESISTANCE
■ VERY LOW GATE CHARGE
APPLICATIONS
■ HIGH-EFFICIENCY ISOLATED DC-DC CONVERTERS
■ TELECOM AND AUTOMOTIVE