STL23NS3LLH7 Datasheet PDF - STMicroelectronics

Description
This N-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations.

FEATUREs
• Very low on-resistance
• Very low Qg
• High avalanche ruggedness
• Embedded Schottky diode

APPLICATIONs
• Switching applications