STL260N3LLH6 Datasheet PDF - STMicroelectronics

Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

FEATUREs
• Very low on-resistance RDS(on)
• Very low gate charge
• High avalanche ruggedness

APPLICATIONs
• Switching applications