DESCRIPTION
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
FEATURE
● 60V/8.2A, RDS(ON) = 35mΩ (Typ.)
@VGS = 10V
● 60V/7.6A, RDS(ON) = 45mΩ
@VGS = 4.5V
● Super high density cell design for
extremely low RDS(ON)
● Exceptional on-resistance and maximum
DC current capability
● SOP-8 package design