Description
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
■ Exceptional dv/dt capability
■ Low gate charge at 100°C
■ Application oriented characterization
■ 100% avalanche tested
Application
■ Switching applications