STP6N65M2 Datasheet PDF - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Part Name
STP6N65M2
Other PDF
no available.
PDF
page
4 Pages
File Size
1 MB
MFG CO.
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATUREs：
1) VDS=650V,ID=7A,RDS(ON)<1.25Ω @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
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