Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

FEATUREs
• DPAK 950 V worldwide best RDS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected

APPLICATIONs
• Switching applications