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STP6NA80FI Datasheet PDF - New Jersey Semiconductor

STP6NA80 image

Part Name
STP6NA80FI

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3 Pages

File Size
145.7 kB

MFG CO.
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low Ros(on) and gate charge, unequalled ruggedness and superior switching performance.

■ TYPICAL Ros(on) = 1.68 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD


APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FORWELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWER SUPPLIES AND MOTOR DRIVE


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