DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 1.5Ω
â–  EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES
â–  100% AVALANCHE TESTED
â–  VERY LOW GATE INPUT RESISTANCE
â–  GATE CHARGE MINIMIZED