DESCRIPTION
The third generation of MESH OVERLAYâ„¢ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 1.55Ω
â–  EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
â–  100% AVALANCHE TESTED
â–  VERY LOW GATE INPUT RESISTANCE

APPLICATIONS
â–  SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
â–  WELDING EQUIPMENT