Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the STMicroelectronics’ strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high-efficiency converters.

FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

APPLICATION
■ Switching applications