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STQ1NC60R-AP Datasheet PDF - STMicroelectronics

STQ1NC60R image

Part Name
STQ1NC60R-AP

Other PDF
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page
9 Pages

File Size
329.8 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

DESCRIPTION
Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 12 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED


APPLICATIONS
■ LOW SWITCH MODE POWER SUPPLIES (SMPS)
■ BATTERY CHARGER


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